71



 Annealing also increases the amount of conduction charge. Fig 4.6 shows that for


half-stack device, annealing causes increases of 17% and 45% in the external conduction





 4





 ad-half

 ^ --ad-full



 -20 200 150 -100 -50 50 100 150 200 2 0

 U)
 Cu
 I-)
 <u Iy^.
 Q F/
 9)-------* ---- 1 --------------
 ? ^" ^
 ^


Voltage (V)


Fig 4.12 Q-V curve at V40 from as-deposited ZnS:TmF3 half-stack vs. full-stack devices.