3 50E-01





 S2 50E-01
E
2 2 00E-01
 as-deposited
 Shalf-stack
S1 50E-01


1 OOE-01
 as-deposited
 5 00E-02 / ^full-stack
 5 00E-02


 0 OOE+00 --x** x*r
 900 1000 1100 1200 1300 1400 1500 1600 1700
 Wavelength (nm)


 4 00E-01
 annealed
 half-stac3k
 3 50E-01


 3 00E-01 -

 E
c2 50E-01
E

32 00E-01

S
, 1 50E-01


 1 00E-01
 annealed
 full-stack
 5 00E-02


 0 00E+00---
 900 1000 1100 1200 1300 1400 1500 1600 1700
 Wavelength (nm)



 b)


Fig 4.2 Infrared emission spectrum of (a) as-deposited, (b) annealed ZnS:ErF3 half vs. full
 stack devices