130






M31 iAY 1979

    860      P 8=14 D I J)/MD(J) )* -.5
    870      R9=(1'D2(J)/MD(J) )*fi-.5
    880      RIO=(MDJ( J)/MD(J)}890      EG=I. 205-2.SE--tT(J)
    900      CFiOGAP=(1.205/-C)'*  ho,6667
    91 0     tA3T=M3*CRoGAP
    920       R P T' ' 6,30)
    930#130  FORPM.AT( H////X,'CONDUCTIVITY AND HALL EFFECTIVE
    931     MASS, CONDUCTIVITY AND IAALL MO9ILITY*'/8X 'AND
    940     &HALL FACTOP AS FUNCTIONS OF DOPANT CONCENTRATION.
    950     & BORON DOPED Slt.ICON'//)
    960      WRITE(6-40)T(J)
    970;J40   FO.P, AT(/40X , 'T=' . 4. 0////)
    980C
    990C  COMPUTE iNTERBAND SCATTERING PARAMETERS
    lDOOC
    1010      YI=MDI(J)
    1020      Y2:tD2(J)
    1030      CALL 1NTBD(Y.1Y2Cl,C2ZC12,C21,CI12)
    1 040C
    1050C  INTRODUCE TE MFERATURE AND MASS PARAMETERS
    1060C TO THE CALCULATION OF SCATTERING RELAXATION TIMES
    1070C
    1080      ACIIT=(CCI/TAUO)*, ,D(J) *I5T(J),'*I,5
    1090      AC22T=iCZ2/TAUO)*,MD2(JVI-S*l15T(J)** 15
    1100      AC2T=(C &2/TAU0)'r.DI ( J)1.5 T(J),1I5
    1101     F&(MD2(J )/MDI (J) )**2.5
    1110      AC21T=(C21/TAUO)4-1D2(J) y1 5 T(J)**1.5
    1120      TAC33=1.o/TAUO
    1130      AC33T=TAC33*T(J) * 1,5
    1140      PDIST=lo/(EXP(C4)-1 *)
    1150      PDIST I=PDIST+l
    1160      OPl1T=TOPIIcSQRT(T(J))*MDL fJ)**105
    1170      OP22T =TOP22*SORT( T J) )*MD2( J) tc 1.5
    1180      OP33T=TOP33 :LQORT(T(J)) M3T**.{1.5
    1190      T! 11T=.TIC/( T(J) #!10,5eMD! CJ ),*0DS
    1200      T122T =TIC/(T{J)1.5@MD2 J)*40.5)
    1210      TI233T.TI C/(T(J)**1.54,3T**0.5)
    1220      tBlT=GC*T(J4)-'2.*?-,D1(J)
    12:30     F2TGC*T(J )5'*2.*MD2( J
    1240      83T=GC*Ti(J)**2,*M3T
    1250      TNG=TN *MD ( J)/( K0 $T( J))
    1260      TNHI=TNF/(SaPr(T(J) ) MD 1(J)**1,5)
    1270      TNH2=TNF/(SQRT(T(J)) .'MD2(J)**1.5)
    1280      TNH3=TNF/(SORT(T(J))*MD3(J)**1.5)