31 MAY 1979


10C
20C CONDUCTIVITY EFFECTIVE MASS, HALL EFFECTIVE MASS, 30C C3NDUCTIvITY MO3ILITY, HALL MO31LITY,AND 4-0C HALL FACTOR AS FUNCTIONS OF TEMPERATURE AND 45C AZCF.PTGR IMPURITY DENSITY IN SILICON 50C DOPED WITH BORON 60C
70      RFFAL MDI,MD2,4D3,1ID,NN,NAINALIt
00      REAL M1 M2, MCI3,4 MITveM2T,'-i3T, K, KOM O, KT
90      REAL MMH1,i.l MH2,, MAH3 , MC,MCI 1 •MC2, MC3
100      REAL MOBI ,vMB2,M0B3,MOMOBH
I0       REAL MOBZ
120C
130      DIMENSION ZqOP( IO,,PCTG(50),T(I0)
14.0     DIM7F"NSION NN(S0),NAI'(50),PP( S0).A(50)
150      DIMShSION M-DI (I0) ,MD2(1C),MD3(ID),MDi(O)
160C
170      F5(X}=(X-C3) *I,5*EXP(C3-X)
10       F6(X)=X4-*;qI5*ExP(-X)
190      F7(X)= (X-C2)* 1,5*XEX(-x)
200C
210      DATA KA,E3C/8,62E-5S4,27,0,.63,4.93/
220      DATA DELTAMOKO/oOo44, 9.10956=-31,.1.38062E-23/
230      DATA HBARFI PP/Ii05459E-34*6,6_52E--34,3,1I1I9/
240      DATA EOES/8.oS41854E-I2,1I1.7/
250      DATA TAUOvWW/6,960E-O.0,.244/
260      DATA (/1v 602197-19/
270      DATA TH-TAlM liM2.@ 1.3/735a 0,0.537,0. 153,0. 234/
280C
290C READ IN TEMPERATURES AND 300C DENSITY OF STATES EFFECTIVE MASSES 310C READ IN THE H-H SCATTERING CORRECTION 315C FACTOR TO OPTICAL PHONON SCATTERING 320C
330      READ(510)(T(J), J=11,10)
340PI0    FORMAT I IOF60) 350     READ(Sv 1) ( MI (L),L=I ,0)
360      READ(5,1L)(MD2(L)sL=lO)
370      PEAD5,1!)(MD3(L),L10}
380      READ(5.1) (MD(L) ,L=zlglD )
390#12    FGRMAT(IO0(7,,5lX)) 400     READ(5,12) (CROFCL),L= , 10)
410 12    FOPMAT(10{r(F{4,1X)) 420C
430C READ IN DOPANT CONCENTRATIONS