5 GO




     400




  >, 300


0

     200




     100




       0*
       10 1










 Figure 7.1.


Hole Density (cm- )


Hole mobility vs hole density for boron-doped silicon at 300 K. Curve 1 is the theoretical calculation from equation (3.23), and curve 2 is reproduced from Wagner [8]. Shown also are the experimental results of this work, Horn [13], and Thurber et al [12]. All data points have been corrected for deionization effects.