have been found highly useful. Similar curves developed in this research may be expected to be equally useful for characterizing and integrating infrared detectors based on. the deeper levels of indium and gallium with on-chip silicon electronics*. Application of a more complete theory of mobility and resistivity [17] to the case of silicon doped with gallium and indium should provide an accurate description of the transport of holes in this material.  These results may be of significant use in the study and design of infrared photo-detec tor devices.

      In this research the mobility, resistivity, and hole density have been studied over a temperature range from 100 to 400 K and dopant densities from 4.25x101  to 9.05x10 . cm.     Because of the complexity brought about by heavy doping effects and uncertainties in accounting for hole density and impurity density at high dopant densities, the theoretical analysis has been restricted to densities below 10 18 cm-3 in which the use of Boltzmann statistics is justified. The nonparabolic nature of the Valence-band structure and derivation of expressions for the-.temperature dependent effective masses are presented in Chapter II. Since effective mass is directly related to the shape of the valence bands, the result is an effective mass which varies with temperature and dopant density.  The mobil ity formulation includes consideration of the, relevant scattering mechanisms and how these are modified by hole-hole scattering effects. These scattering mechanisms are considered in detail in Chapter III. Since the different scattering mechanisms which contribute to the mobility have different temperature and energy dependences, the use of numerical methods'and curve fitting has been applied in analyzing the data. The temperature and dopant density dependence of resistivity and hole density is analyzed in Chapter IV. In Chapter V,