Abstract of Dissertalion Presented to the Graduate Council
of the University of Florida in Partial Fulfillment of the Requirements
                for the Degree of Doctor of Philosophy


             THE MOBILITY, RESISTIVITY AND CARRIER DENSITY
        IN p-TYPE SILICON DOPED WITH BORON, GALLIUM AND INDIUM

                                  By

                          Luis Carlos Linares

                              August 1979

Chairman: Sheng-San Li
Major Department: Electrical Engineering

     Using the relaxation time approximation and a three-band model

(i.e., nonparabolic light-hole band, parabolic heavy-hole and split-off bands), a derivation involving the use of the Boltzmann transport theory was applied to obtain expressions for the valence band density-of-states effective mass, m*, the valence band conductivity effective mass, m , and the valence band Hall effective mass, m*, of holes in p-type silicon. Values of effective mass calculated from this model reveal the temperature and dopant density dependence of the effective mass due to the nonparabolic shape of the bands. With these values of effective mass and the three-band model, theoretical calculations of hole mobility, resistivity, Hall factor and Hall mobility were conducted for p-type silicon doped with boron, gallium and indium for dopant densities from 1014 to 1018 cm-3 and temperatures between 100 and 400 K. Scattering contributions from acoustical and optical phonons, and ionized and neutral impurities were considered. In addition, interband scattering