w      Thickness of the chip

       Ratio of defformation potential constants Y     Function of band mass parameters

       Ratio of density-of-state effective masses
Yhha   Hole-hole reduction factor for acoustic phonon scattering Yhh   Hole-hole reduction factor for ionized impurity scattering Y hh0 Hole-hole reduction factor for optical phonon scattering A     Energy of spin orbit splitting
       Reduced energy (E/k T)

       0Variable of integration E2    Variable of integration


E s    Relative dielectric constant

       Limit of integration Reduced Fermi-energy nIl   Scaling factor
0      Spherical coordinate

.0D    Debye temperature PC    Conductivity mobility in the combined band

UCi    Conductivity mobility in band i
       Hall mobility in the combined band

       Limit of integration defined in Figure 2.1

P      Resistivity of holes

Ps      Density of silicon

aC      Electrical conductivity

aH      Hall conductivity

T      Total scattering relaxation time

T aci  Acoustic phonon scattering relaxation time in band i


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