w Thickness of the chip
Ratio of defformation potential constants Y Function of band mass parameters
Ratio of density-of-state effective masses
Yhha Hole-hole reduction factor for acoustic phonon scattering Yhh Hole-hole reduction factor for ionized impurity scattering Y hh0 Hole-hole reduction factor for optical phonon scattering A Energy of spin orbit splitting
Reduced energy (E/k T)
0Variable of integration E2 Variable of integration
E s Relative dielectric constant
Limit of integration Reduced Fermi-energy nIl Scaling factor
0 Spherical coordinate
.0D Debye temperature PC Conductivity mobility in the combined band
UCi Conductivity mobility in band i
Hall mobility in the combined band
Limit of integration defined in Figure 2.1
P Resistivity of holes
Ps Density of silicon
aC Electrical conductivity
aH Hall conductivity
T Total scattering relaxation time
T aci Acoustic phonon scattering relaxation time in band i
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