FIGURE


5.5   Theoretical Hall factor vs temperature for
      boron-doped silicon with dopant density as
      a parameter           .   .  . . . . . . . .  . . . .

56    Theoretical Hall factor vs dopant density for
      boron-doped silicon with temperature as a parameter

5.7   Theoretical Hall mobility as a function of temperature
      for boron-doped silicon with dopant density as a


parameter . . .


5.,8  Theoretical Hall mobility as a function of dopant
      density for boron-doped silicon with temperature
      as a parameter .                                   .

7.1   Hole mobility vs hole density for boron-doped
      silicon at 300 K .

7.2   Resistivity vs dopant density for boron-doped
      silicon at 300 K .

7.3   Resistivity vs dopant density for gallium- and
      indium-doped silicon at 300 K     .

7.4   Resistivity vs temperature for the.boron-doped
      silicon samples   . . . . . . . . . . . . . . . . . .

7.5   Resistivity vs temperature for the gallium-doped
      silicon samples   . . . . . . .  . . . . . . . . . .

7.6   Resistivity vs temperature for the indium-doped
      silicon  samples   . . . . . . . .    . . . . . . . .


. .  . . . . . . . . . . . . . .   76


77


85 87 88 90


91 92


7.7   Hall
      NA = 7.8  Hall
      NA = 7.9  Hall
      NA = 7.10 Hall
      NA =

7.11  Hall
      NA =


mobility vs temperature for gallium-doped sample. 4.25xi015 cm-3  . . . .  . . . . . . . . . . . .

mobility vs temperature for gallium-doped sample. 4.09xi016 cm-3 . . . . .  . . . . . .  . . . . .

mobility vs temperature for gallium-doped sample. 1,.26xi017 cm 3 . . . . . . . . . . . . . . ,

mobility vs temperature for gallium-doped sample. 3,46xi017 cm-3

mobility vs temperature for indium-doped sample.
       16   -3
4.64x10   cm-


ix


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