FIGURE PAGE
4.1 Theoretical calculations of the ratio of ionized
and total boron density vs boron density with
temperature as a parameter. . . . . . .52
4.2 Theoretical calculations of the ratio of ionized
and total gallium density vs gallium density with*
temperature as-a parameter. . . . . . . . .53
4.3 Theoretical calculations of the ratio of ionized
and total indium density vs indium density with
temperature as a parameter. . . . . . . . .54
4.4 Theoretical calculations of resistivity vs temperature for boron-doped silicon with dopant density as a
parameter. . . . . . . . . . . .56
4.5 Theoretical calculations of resistivity vs temperature for gallium-doped silicon with dopant density as a
parameter. . . . . . . . . . . . . . .57
4.6 Theoretical calculations of resistivity vs temperature for indium-doped silicon with dopant density as. a
parameter. . . . . . . . . . . . . . .58
47 Theoretical calculations of resistivity vs dopant
density for boron-doped silicon with temperature
as a parameter. . . . . . . .5
4.8 'Theoretical calculations of resistivity vs dopant density for gallium-doped silicon with temperature
as aparameter. . . . . . . . . . . . . .60
4.9 Theoretical calcula-tions of resistivity vs dopant density for indium-doped silicon with temperature
as a parameter. . . . . . . . . . . .61
5.1 The mass anisotropy-factor rpA as a function of temperature for various impurity dopant densities . . . . . .68
5.2 The mass anisotropy factor rA as a function of impurity dopant density for various temperatures . . . . .69
5.3 The scattering factor rS as a function of temperature for boron-doped silicon with dopant density as a
parameter. . . . . . . . . . . . .7
5.4 The scattering factor rsas a function of dopant density for boron-doped silicon with temperature
as a parameter. . . . . . . . . . . . .71
Viii