THE MOBILITY, RESISTIVITY AND CARRIER DENSITY
IN p-TYPE SILICON DOPED WITH BORON, GALLIUM AND INDIUM











                          By

                  LUIS CARLOS LINARES


A DISSERTATION PRESENTED TO THE GRADUATE COUNCIL OF
             THE UNIVERSITY OF FLORIDA
IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE
          DEGREE OF DOCTOR OF PHILOSOPHY









               UNIVERSITY OF FLORIDA


1979